FDD6530A
Manufacturer:
On Semiconductor
Mfr.Part #:
FDD6530A
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 33 W 20 V Continuous Drain Current (ID):21 A 9 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 2.39 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Current Rating | 21 A |
| Lifecycle Status | EOL (Last Updated: 2 months ago) |
| Max Power Dissipation | 1.6 W |
| Power Dissipation | 33 W |
| Number of Channels | 1 |
| Input capacitance | 710 pF |
| Continuous Drain Current (ID) | 21 A |
| Rds On Max | 32 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 18 ns |
| Element Configuration | Single |
| Fall Time | 4 ns |
| Rise Time | 7 ns |
| Gate Charge | 9 nC |
| Drain to Source Resistance | 32 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | LIFETIME (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 400 mV |
| FET Type(Transistor Polarity) | N-Channel |
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